SILICON CARBIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact which is dense and is free from defects by eliminating crack or metal vein of the silicon carbide sintered body. SOLUTION: In the silicon carbide sintered compact made by impregnating a porous body comprising silicon carbide or sili...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HIKITA TOMOYUKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact which is dense and is free from defects by eliminating crack or metal vein of the silicon carbide sintered body. SOLUTION: In the silicon carbide sintered compact made by impregnating a porous body comprising silicon carbide or silicon carbide and carbon with silicon at a temperature equal to or above the melting point of silicon under a non-oxidizing atmosphere, the porous body has pores in which the ratio by volume of the pore having a diameter fourth times of the peak value in the pore diameter distribution is 2-20% to the volume of all pores. The peak value in the pore diameter distribution of the porous body is 0.4-50 μm. COPYRIGHT: (C)2011,JPO&INPIT