SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To obtain a high-output and high-gain power amplifier used in microwave and millimeter-wave bands. SOLUTION: On a microstrip line 109, slits 116, 117 are formed along a transmission direction of a high-frequency signal inputted to the center of an input matching circuit 102 fro...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To obtain a high-output and high-gain power amplifier used in microwave and millimeter-wave bands. SOLUTION: On a microstrip line 109, slits 116, 117 are formed along a transmission direction of a high-frequency signal inputted to the center of an input matching circuit 102 from an input terminal 110, and the slit 116 at an adjacent position of the center is set to be longer than that of the slit 117. COPYRIGHT: (C)2010,JPO&INPIT |
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