METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To form a thin film on a substrate at a low temperature with a practical film-forming rate. SOLUTION: This method of manufacturing a semiconductor device used for forming an oxide or nitride film on a substrate by executing: a material gas exposure process of exposing the substrate to a material gas; a modification gas exposure process of exposing the substrate to a modification gas being either an oxidation gas or a nitriding gas having atoms different in electronegativity; and a catalyst exposure process of exposing the substrate to a catalyst. In the catalyst exposure process, a catalyst having an acid dissociation constant pKaof 5 to 7 (excluding pyridine) is used. COPYRIGHT: (C)2010,JPO&INPIT