METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for a semiconductor device, a method for manufacturing a semiconductor device, a substrate for the semiconductor device and a semiconductor device for improving a joining strength between a metal layer and sealing resin, and for forming an electrode whose top surface is flat, and whose horizontal size is also uniform, and for sufficiently coping with micro-fabrication. SOLUTION: This method for manufacturing a substrate for a semiconductor device includes: a resist forming step to form a resist layer 21 on the surface of a conductive substrate 10; an exposure step to expose the resist layer using a glass mask 30 with a mask pattern 31; a development step to develop the resist layer, and form, on the substrate, a side face-shaped resist pattern 22 including a slope part 25 decreasing in hollow circumference as the hollow circumference approaches the substrate; a plating step to plate on the exposed area of the substrate by using the resist pattern, and to form a side face-shaped metal layer 40 including a slope part 44 decreasing in circumference as the circumference approaches the substrate; and a resist removing step to remove the resist pattern. COPYRIGHT: (C)2010,JPO&INPIT