VAPOR GROWTH APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR

PROBLEM TO BE SOLVED: To provide a vapor growth apparatus of a group III nitride semiconductor which can prevent a crack of a substrate even in a case of vapor growth of a substrate with a diameter of three inches or larger. SOLUTION: The vapor growth apparatus of a face down type group III nitride...

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Hauptverfasser:	TAKAHASHI YUZURU, ISO KENJI, ISHIHAMA YOSHIYASU, TAKAGI RYOHEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a vapor growth apparatus of a group III nitride semiconductor which can prevent a crack of a substrate even in a case of vapor growth of a substrate with a diameter of three inches or larger. SOLUTION: The vapor growth apparatus of a face down type group III nitride semiconductor includes a susceptor for holding the substrate with a down-turned crystal growth surface, an opposite face of the susceptor, a heater for heating the substrate, a material gas introducing part arranged in a center part of the susceptor, a reaction furnace formed of a gap between the susceptor and the opposite face of the susceptor, and a reaction gas discharge part arranged on an outer circumference side of the susceptor. The susceptor 2 includes four or more claws 10 for one substrate holder 8. COPYRIGHT: (C)2010,JPO&INPIT