METHOD OF PROCESSING SUBSTRATE, PROGRAM, COMPUTER STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM

PROBLEM TO BE SOLVED: To equalize the line width of a pattern of a processing film formed on a substrate, in a substrate plane. SOLUTION: A pattern is formed on a processing film on a wafer for testing (Step S1). The line width of the pattern of the film is measured (Step S2). On the basis of the measurement results about the line width, the heating temperature in a PEB apparatus is corrected (Step S3). When the measured line width in a peripheral portion of the wafer is larger than a targeted line width, an amount of a developing fluid to be supplied to the peripheral portion is corrected to be increased in development processing (Step S4). In contrast, when the measured line width in the peripheral portion is smaller than the targeted line width, a treatment liquid must be supplied to the peripheral portion of the wafer after the development processing, and an amount of the treatment liquid to be supplied is set (Step S5). Then, photolithographic processing is performed on the wafer to form a resist pattern (Step S6). Thereafter, the wafer is etched to form a predetermined pattern on the film (Step S7). COPYRIGHT: (C)2010,JPO&INPIT