METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE AND FILM FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-performance photoelectric conversion device by forming the film of a high-quality crystalline substance silicon layer, and to provide a film forming device for forming the film of the high-quality crystalline substance silicon layer. SOLUTION: In the method of manufacturing the photoelectric conversion device that forms the crystalline substance silicon-based photoelectric conversion layer including an (i) layer on a substrate by a plasma CVD method, the process of forming the (i) layer includes: an initial layer film-forming step; and a bulk (i) layer film-forming step. In the initial layer film-forming step, the film of an initial layer is formed under a condition in which a silane-based gas flow rate in the initial layer film-forming step is lower than a silane-based gas flow rate in the bulk (i) layer film-forming step and in which the film formation time of the initial layer film-forming step is equal to or more than 5% and equal to or less than 20% of the whole film formation time of the (i) layer. COPYRIGHT: (C)2010,JPO&INPIT