SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of selectively etch-removing only the upper layer formed on a surface edge part of a substrate. SOLUTION: While a chemical is supplied to a hardly soluble layer UL formed at the surface edge part TR of the substrate W to remove the hardly soluble layer UL by etching, a rinse liquid is supplied to the substrate-end surface side of the hardly soluble layer UL to form a cover rinse part CL, and a base layer DL exposed by etching-removing of the hardly soluble layer UL is covered with the rinse liquid. For this reason, the chemical flowing to the base layer DL is diluted, and the base layer DL exposed by flushing away is prevented from being etched by the chemical. In this way, since the etching process is performed in a condition where the cover rinse part CL is provided to the substrate-end surface side of the hardly soluble layer UL and the exposed base layer DL is protected, only the hardly soluble layer UL formed at the surface edge part TR of the substrate W is selectively etch-removed. COPYRIGHT: (C)2010,JPO&INPIT