FILM DEPOSITION METHOD AND FILM DEPOSITION SYSTEM

PROBLEM TO BE SOLVED: To provide a film deposition system capable of stably performing a plurality of film deposition batches continuously. SOLUTION: The film deposition system includes: a film deposition process region for sticking a sputtering substance of a target to a substrate; a reaction proce...

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Bibliographische Detailangaben
Hauptverfasser: SHIONO ICHIRO, KYO YUSHO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a film deposition system capable of stably performing a plurality of film deposition batches continuously. SOLUTION: The film deposition system includes: a film deposition process region for sticking a sputtering substance of a target to a substrate; a reaction process region for converting the composition of the sputtering substance by bringing a reactive gas into contact with the substrate, which is arranged in isolation from the film deposition process region; and a substrate holding and moving means for repeatedly moving the substrate between the film deposition process region and the reaction process region. Further, a load lock chamber 11B connected to a film deposition chamber, in which the film deposition process region and the reaction process region are arranged, through an openable and closable isolating means 11b is included. In the load lock chamber 11B, a heating device 90 for heating the inside of the load lock chamber 11B is provided, and a vacuum pump 15' for evacuating the inside of the load lock chamber 11B is connected to the load lock chamber 11B. In the load lock chamber 11B, a gas condensing and collecting device 70 for condensing and collecting moisture as an impurity component floating in the load lock chamber 11B is provided. COPYRIGHT: (C)2010,JPO&INPIT