WAFER BONDING APPARATUS, AND METHOD OF BONDING WAFERS

PROBLEM TO BE SOLVED: To easily prevent deterioration of degree of vacuum in a space hermetically sealed by bonding. SOLUTION: A method of bonding wafers includes the steps of: irradiating charged particles on a first surface of a first bonding object 7 and a second surface of a second bonding objec...

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Bibliographische Detailangaben
Hauptverfasser:	IDE KENSUKE, UCHIUMI ATSUSHI, GOTO TAKAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To easily prevent deterioration of degree of vacuum in a space hermetically sealed by bonding. SOLUTION: A method of bonding wafers includes the steps of: irradiating charged particles on a first surface of a first bonding object 7 and a second surface of a second bonding object 8; irradiating electrons so that material is desorbed from the first surface and the second surface, using an electron source 15 for neutralizing charge-up due to irradiation of the charged particles; and bonding the first bonding object 7 and the second bonding object 8. COPYRIGHT: (C)2010,JPO&INPIT