SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To relax an electric field between a source and a drain of a lateral double diffusion field effect transistor while suppressing an increase in lateral dimension. SOLUTION: In an N-type drift layer 17, a P-damper layer 19 is formed which is disposed under an embedded insulating...

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Hauptverfasser: IWAZU YASUTOKU, YAMADA TASUKU, NAKAMURA YUKI, YAMAURA KAZUAKI, NAGANO HIROBUMI, MORIOKA JUN, SHIRAI KOJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To relax an electric field between a source and a drain of a lateral double diffusion field effect transistor while suppressing an increase in lateral dimension. SOLUTION: In an N-type drift layer 17, a P-damper layer 19 is formed which is disposed under an embedded insulating layer 14, and an N-damper layer 18 is formed which is disposed to surround the P-damper layer 19. An impurity concentration is set so as to cause depletion under the embedded insulating layer 14 in the N-damper layer 18 and the P-damper layer 19. COPYRIGHT: (C)2010,JPO&INPIT