METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can decrease a leakage current of an element and improve the breakdown voltage by reducing an influence of electric charges in an interlayer dielectric on an electric field. SOLUTION: As the interlayer dielectric,...

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1. Verfasser:	MAIKUMA KEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can decrease a leakage current of an element and improve the breakdown voltage by reducing an influence of electric charges in an interlayer dielectric on an electric field. SOLUTION: As the interlayer dielectric, a composite film is formed which comprises two layers of a deposition oxide film 2a made of SiH4and N2O and a TEOS oxide film 2b made of TEOS and O2to reduce the influence of electric charges 5 in the TEOS oxide film 2b on the electric field by the deposition oxide film 2a, and the leakage current of the element is thereby reduced to improve the breakdown voltage. Consequently, the efficiency percentage can be improved. COPYRIGHT: (C)2010,JPO&INPIT