RESIST MATERIAL AND METHOD FOR FORMING PATTERN USING THE SAME

PROBLEM TO BE SOLVED: To provide a method for forming a pattern having a good feature while decreasing roughness generating in a resist pattern. SOLUTION: A resist film 102 is formed on a substrate 101, and the formed resist film 102 is subjected to pattern exposure by selectively irradiating with e...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a pattern having a good feature while decreasing roughness generating in a resist pattern. SOLUTION: A resist film 102 is formed on a substrate 101, and the formed resist film 102 is subjected to pattern exposure by selectively irradiating with exposure light. Then, the resist film 102 after the pattern exposure is heated and development is performed to the heated resist film 102 to form a resist pattern 102a from the resist film 102. The resist material constituting the resist film 102 contains an ionic photoacid generator, a first polymer containing an acid leaving group and a hydrophilic group, and a molecule or a second polymer having lower affinity to the photoacid generator compared to the first polymer. COPYRIGHT: (C)2010,JPO&INPIT