DIELECTRIC ELEMENT

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ceramic capable of lowering the crystallization temperature of the ceramic and improving the surface morphology of the ceramic. SOLUTION: The method of manufacturing a ceramic includes forming a film which includes a complex oxide material...

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Bibliographische Detailangaben
Hauptverfasser: NATORI EIJI, FURUYAMA KOICHI, TAZAKI YUZO, KIJIMA TAKESHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a ceramic capable of lowering the crystallization temperature of the ceramic and improving the surface morphology of the ceramic. SOLUTION: The method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is a layered catalytic substance which includes Si in the constituent elements or a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is preferably performed in a pressurized atmosphere including at least one of oxygen and ozone. The ceramic is the complex oxide material having the oxygen octahedral structure and contains Si and Ge in the oxygen octahedral structure. COPYRIGHT: (C)2010,JPO&INPIT