METHOD OF EVALUATING CONTAINED AMOUNT OF Cu AND Ni IN SILICON SUBSTRATE

PROBLEM TO BE SOLVED: To provide a simple and high-accuracy quantitative analysis method for Ni and Cu which negatively affect semiconductor substrate characteristics. SOLUTION: A method of evaluating a contained amount of Cu and Ni in a silicon substrate includes: a step (1) of forming a polysilicon film on front and back surfaces of an evaluated target silicon substrate; a step (2) of heating the silicon substrate on which the polysilicon film is formed at a temperature of 800-950°C for 30-60 minutes; a step (3) of cooling the silicon substrate heated at the temperature of 800-950°C to 430-480°C, and further cooling the silicon substrate from 430-480°C to 270-330°C at a cooling rate of 1-10°C/min; a step (4) of cooling the silicon substrate to a room temperature after keeping the silicon substrate at the temperature of 270-330°C for 30-60 minutes; and a step (5) of solving the polysilicon film of the cooled silicon substrate, and quantifying the Cu and Ni in the lysate. COPYRIGHT: (C)2010,JPO&INPIT