NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide a large-capacity semiconductor storage device which can be made compact and low in cost, and which attains a start time and an access time which are short. SOLUTION: The semiconductor storage device includes an error correction circuit which performs error detection/...

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Bibliographische Detailangaben
Hauptverfasser: KATAYAMA KUNIHIRO, SHIODA SHIGEMASA, NAITO SATOYUKI, INOUE KIYOSHI, TAMURA TAKAYUKI, WATAYA HITOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a large-capacity semiconductor storage device which can be made compact and low in cost, and which attains a start time and an access time which are short. SOLUTION: The semiconductor storage device includes an error correction circuit which performs error detection/correction on the data stored in a non-volatile semiconductor memory, and a plurality of buffers. Transferring of the data after error detection/correction by the error correction circuit to a host from one of the plurality of buffers through an interface control circuit and transferring the other data for error detection/correction by the error correction circuit, to the other one of the plurality of buffers from the non-volatile semiconductor memory are performed in parallel. COPYRIGHT: (C)2010,JPO&INPIT