SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device having sufficient conduction resistance. SOLUTION: The semiconductor device includes: a first semiconductor layer 12 of a first conductivity type, formed on a principal surface of a semiconductor substrate 11 of the first conductivity type; a second semiconductor layer 13 of a second conductivity type, formed on the first semiconductor layer 12; a semiconductor element 14 having a first electrode on the side of the second semiconductor layer 12 and a second electrode on the side of the first semiconductor layer 11; a third semiconductor layer 15 of the first conductivity type, formed in the first semiconductor layer 12 between the second semiconductor layer 13 and semiconductor substrate 11 and having a higher impurity concentration than that of the first semiconductor layer 12; and an electric field-relaxing means 16 formed in the semiconductor layer 12 and relaxing an electric field on a joining surface between the first semiconductor layer 12 and second semiconductor layer 13. COPYRIGHT: (C)2010,JPO&INPIT