SELF-SUPPORT SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a high-quality GaN-based semiconductor self-support substrate for a substrate giving sufficient electronic device characteristics. SOLUTION: The self-support substrate comprises a GaN-based semiconductor and is characterized by that, when a Schottky diode is formed b...

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Hauptverfasser:	SHIMOYAMA KENJI, DOI NARIHIRO, KIYOMI KAZUMASA, OTA HIROKI, NAGAO SATORU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a high-quality GaN-based semiconductor self-support substrate for a substrate giving sufficient electronic device characteristics. SOLUTION: The self-support substrate comprises a GaN-based semiconductor and is characterized by that, when a Schottky diode is formed by directly using Ni as a metal electrode on the surface of the self-support substrate, the ideality factor n-value in the current-voltage characteristics is 1 or more and 1.3 or less. Preferably, when the Schottky diode is formed, a current value under application of -5 V reverse voltage is not more than 50 times as the theoretical current value calculated as a sum of the calculated values by a thermal-field emission model and by a thermoelectronic emission model. COPYRIGHT: (C)2010,JPO&INPIT