CMP METHOD UTILIZING AMPHIPHILIC NONIONIC SURFACTANT

PROBLEM TO BE SOLVED: To provide methods of polishing a substrate having a metal layer. SOLUTION: The invention provides methods of polishing a substrate including steps of (i) contacting a substrate having at least one metal layer having copper with a chemical-mechanical polishing (CMP) system and...

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Hauptverfasser: CHOU HOMER, CHAMBERLAIN JEFFREY P, SCHROEDER DAVID J, HAWKINS JOSEPH D, CARTER PHILLIP W, MOEGGENBORG KEVIN J
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creator CHOU HOMER
CHAMBERLAIN JEFFREY P
SCHROEDER DAVID J
HAWKINS JOSEPH D
CARTER PHILLIP W
MOEGGENBORG KEVIN J
description PROBLEM TO BE SOLVED: To provide methods of polishing a substrate having a metal layer. SOLUTION: The invention provides methods of polishing a substrate including steps of (i) contacting a substrate having at least one metal layer having copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer having copper to polish the substrate. The CMP system has (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate having a first metal layer and a second, different metal layer. The first metal layer is polished with a first CMP system having an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system having (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier. COPYRIGHT: (C)2010,JPO&INPIT
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SOLUTION: The invention provides methods of polishing a substrate including steps of (i) contacting a substrate having at least one metal layer having copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer having copper to polish the substrate. The CMP system has (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate having a first metal layer and a second, different metal layer. The first metal layer is polished with a first CMP system having an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system having (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier. 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subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
TRANSPORTING
title CMP METHOD UTILIZING AMPHIPHILIC NONIONIC SURFACTANT
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