CMP METHOD UTILIZING AMPHIPHILIC NONIONIC SURFACTANT

PROBLEM TO BE SOLVED: To provide methods of polishing a substrate having a metal layer. SOLUTION: The invention provides methods of polishing a substrate including steps of (i) contacting a substrate having at least one metal layer having copper with a chemical-mechanical polishing (CMP) system and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHOU HOMER, CHAMBERLAIN JEFFREY P, SCHROEDER DAVID J, HAWKINS JOSEPH D, CARTER PHILLIP W, MOEGGENBORG KEVIN J
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide methods of polishing a substrate having a metal layer. SOLUTION: The invention provides methods of polishing a substrate including steps of (i) contacting a substrate having at least one metal layer having copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer having copper to polish the substrate. The CMP system has (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate having a first metal layer and a second, different metal layer. The first metal layer is polished with a first CMP system having an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system having (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier. COPYRIGHT: (C)2010,JPO&INPIT