METHOD FOR COOLING CHAMBER FOR EPITAXIALLY GROWTH, AND DEVICE THEREFOR

PROBLEM TO BE SOLVED: To provide a method for cooling a chamber for epitaxial growth, and to provide a device therefor which can suppress the occurrence of wall deposition on an inner wall of an exit portion of the chamber. SOLUTION: An upper surface of a ceiling board of the chamber is divided into...

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Bibliographische Detailangaben
1. Verfasser:	FUJII KOKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for cooling a chamber for epitaxial growth, and to provide a device therefor which can suppress the occurrence of wall deposition on an inner wall of an exit portion of the chamber. SOLUTION: An upper surface of a ceiling board of the chamber is divided into three of an entrance area portion, a central area portion, and an exit area portion by two current plates, and cooling water is supplied to them individually. In this case, a temperature of cooling water to the exit area portion is made higher than that of cooling water to the central area portion to make a temperature of the exit portion higher than conventional temperatures, whereby the amount of deposition of decomposition products produced by bringing reactant gas into contact with the inner wall of the exit portion is reduced on the inner wall and the occurrence of wall deposition on the inner wall of the exit portion can be suppressed. COPYRIGHT: (C)2010,JPO&INPIT