METHOD OF MANUFACTURING EPITAXIAL WAFER, DEFECT REMOVING METHOD, AND THE EPITAXIAL WAFER

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer which has an epitaxial film with a uniform thickness distribution and superior planarity and can be manufactured with simple steps, and to provide the epitaxial wafer. SOLUTION: A wafer is obtained, by cutting a silicon si...

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Hauptverfasser:	KOSASA KAZUAKI, OKUUCHI SHIGERU, KAWASAKI TOMONORI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY PERFORMING OPERATIONS POLISHING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer which has an epitaxial film with a uniform thickness distribution and superior planarity and can be manufactured with simple steps, and to provide the epitaxial wafer. SOLUTION: A wafer is obtained, by cutting a silicon single crystalline ingot obtained by a CZ method into thin discs (step S1). Next, a surface of the wafer is polished (lapped) to obtain a flat surface (step S2). The wafer is subjected to chemical polishing through etching (step S3), and then both surfaces of the wafer are roughly polished (step S4). After rough polishing, the wafer is subjected to vapor phase etching (step S5) to form an epitaxial film (step S6). The wafer having the epitaxial film formed therein is subjected to finish polishing (step S7) and final cleaning (step S8), at which stage all the steps have been completed. COPYRIGHT: (C)2010,JPO&INPIT