NITRIDE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having a very low forward turn-on voltage and high backward breakdown voltage characteristics in a simple structure. SOLUTION: First and second nitride semiconductor layers made of a III-V nitride semiconductor are stacked on a substrate. A first anode electrode forms an ohmic junction and a second anode electrode forms a Schottky junction by properly selecting an electrode metal constituting the first anode electrode in junction with the first or second nitride semiconductor layer and the second anode electrode in junction with the second nitride semiconductor layer. The second anode electrode is arranged between a cathode electrode and the first anode electrode. As a result, a region in which a carrier does not exist is formed in mid-course of a current path between the first anode electrode and the cathode electrode. COPYRIGHT: (C)2010,JPO&INPIT