SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a mounting structure for remarkably improving the reliability of a temperature cycle in a semiconductor device having actualized a lead-free composition. SOLUTION: The semiconductor device is formed in such a structure that a film 10 including an oxide of Zn and Al i...

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Hauptverfasser: ARAI KATSUO, ITO KAZUTOSHI, ISHII TOSHIAKI, NAKAJO TAKUYA, KAGII HIDEMASA, KAJIWARA RYOICHI, MOTOWAKI NARIHISA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a mounting structure for remarkably improving the reliability of a temperature cycle in a semiconductor device having actualized a lead-free composition. SOLUTION: The semiconductor device is formed in such a structure that a film 10 including an oxide of Zn and Al is formed on the front surface of a semiconductor assembly placed in contact with a polymer resin 12 by bonding a Si chip 5 and a metal lead frame 1 through metal coupling via a bonding layer 4A of a highly conductive porous metal using Ag having a three-dimensional mesh structure as a binding material. Accordingly, a lead-free and highly reliable semiconductor device can be provided by reducing a thermal stress load of the Si chip 5 with bonding via the bonding layer 4A in the porous structure mainly formed of Ag, improving the fatigue life of the bonding layer 4A itself, and preventing the generation of cracks in the bonding part with more improved bonding of the polymer resin 12 due to the anchor effect for the film 10. COPYRIGHT: (C)2010,JPO&INPIT