METHOD OF SETTING CONDITIONS FOR PULLING UP SILICON SINGLE CRYSTAL BY CZOCHRALSKI PROCESS, AND DEVICE FOR PULLING UP SINGLE CRYSTAL SILICON EQUIPPED WITH THE METHOD OF THE CZOCHRALSKI PROCESS

PROBLEM TO BE SOLVED: To provide a method of setting conditions for pulling up single crystal silicon by Czochralski process, in which the rate of single-crystallization in the initial half stage of crystallization on the neck to shoulder of the single crystal silicon can be improved, and also to provide a device for pulling up single crystal silicon equipped with the method of the same. SOLUTION: In a state that a container 11, and a disk 13 floating by surface tension on a surface of a liquid 10 for testing where a powder is floating are allowed to independently rotate, light ray is irradiated from a light source 14 horizontally to a liquid 10 for testing from the outside of the container 11. An image of the surface of the liquid 10 is observed from the above by an optical measurement device 15. An elliptical boundary layer 17 generated on the surface of the liquid 10 is recorded and analyzed. The number of rotations of the container 11 and the number of rotations of the disk 13 and the internal wall shape of the bottom surface of the container 11 are specified from analyzed data so that a parameter Δ which is composed of the maximum and minimum value of the diameter of the elliptical boundary layer 17 varying with time is in the range of ≤0.23. COPYRIGHT: (C)2010,JPO&INPIT