SUBSTRATE TREATING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To enable the entire inner wall of a gas output means such as a nozzle to be cleaned by cleaning gas. SOLUTION: When cleaning the insides of a plurality of nozzles, cleaning gas is supplied to at least one of the plurality of nozzles, inert gas is supplied to nozzles whose clea...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	YOSHINO AKIHITO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To enable the entire inner wall of a gas output means such as a nozzle to be cleaned by cleaning gas. SOLUTION: When cleaning the insides of a plurality of nozzles, cleaning gas is supplied to at least one of the plurality of nozzles, inert gas is supplied to nozzles whose cleaning is not ended yet, and the inert gas is supplied to the nozzle whose cleaning is ended. Then, under the treatment state, the cleaning gas is supplied to another nozzle and the inert gas is supplied to the nozzles whose cleaning is not ended yet. COPYRIGHT: (C)2010,JPO&INPIT