SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that is suitable for forming, for example, an air-gap structure. SOLUTION: The semiconductor device manufacturing method has: a step of forming a first insulating film above a semiconductor substrate; a step of forming a groove in the first insulating film; a step of forming a first metal layer including Ru so as to cover the upper surface of the first insulating film and the inner surface of the groove; a step of forming a second metal layer including copper on the first metal layer; a step in which the second metal layer and the first metal layer on the first insulating film are polished and removed so as to expose the first insulating film and to leave the first metal layer and the second metal layer formed inside the groove; a step of at least partially removing the first insulating film, exposed by the polishing, from the upper surface of the first insulating film; and a step of forming a second insulating film above the first insulating film so as to cover at least the upper surfaces of the first/second metal layers. COPYRIGHT: (C)2010,JPO&INPIT