APPARATUS FOR MANUFACTURING SEMICONDUCTOR OR LIQUID CRYSTAL AND METHOD OF VAPORIZING LIQUID MATERIAL GAS

PROBLEM TO BE SOLVED: To provide an apparatus capable of rapidly manufacturing a semiconductor or liquid crystal display which has high speed, reproducibility, and high uniformity. SOLUTION: The manufacture by a feed forward system is allowed, which includes a control system for a plurality of gas p...

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Bibliographische Detailangaben
Hauptverfasser:	NITTA TAKEHISA, OMI TADAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus capable of rapidly manufacturing a semiconductor or liquid crystal display which has high speed, reproducibility, and high uniformity. SOLUTION: The manufacture by a feed forward system is allowed, which includes a control system for a plurality of gas partial pressures and pressure in an apparatus which can supply given gas which exceeds set flow rate for given time upstream of the apparatus and which can keep a plurality of gas partial pressures and pressure in the apparatus constant by linking the control system to a discharge rate variable vacuum discharge apparatus or an opening variable fluid control valve provided downstream of the apparatus. COPYRIGHT: (C)2010,JPO&INPIT