MATERIAL FOR FORMING BARRIER FILM AND PATTERN FORMING METHOD USING SAME

PROBLEM TO BE SOLVED: To provide a fine pattern with a favorable profile by improving dissolution contrast by immersion lithography. SOLUTION: A resist film 202 is formed on a substrate 201. Then a barrier film 203 containing halogenated adamantane is formed on the resist film 202. Then, the resist...

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Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a fine pattern with a favorable profile by improving dissolution contrast by immersion lithography. SOLUTION: A resist film 202 is formed on a substrate 201. Then a barrier film 203 containing halogenated adamantane is formed on the resist film 202. Then, the resist film 202 is selectively irradiated with exposure light 205 for pattern exposure through the barrier film 203 while a liquid 204 is laid on the formed barrier film 203. After pattern exposure, the barrier film 202 is removed, and the resist film 202 after pattern exposure is developed to form a resist pattern 202a. COPYRIGHT: (C)2010,JPO&INPIT