SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To solve the problem wherein an interface between resin for bonding and an insulating layer is delaminated, so that the delamination causes cracks in the resin for bonding in conventional semiconductor devices. SOLUTION: In the semiconductor device, a wiring layer 25A having the largest film thickness is disposed on a lower layer of a fourth insulating layer 26 subjected to planarization processing, thus greatly relieving a step by the wiring layer 25A on the surface of the fourth insulating layer 26. Then, a wiring layer 27A having a small film thickness is disposed on an upper surface of the fourth insulating layer 26. By this structure, the step width of a recessed region on the surface of the passivation film 29 is relieved, a local increase in the thickness of a bonding resin 3 is prevented, and abnormal bonding resin appearance due to thermal stress is prevented. COPYRIGHT: (C)2010,JPO&INPIT