MAGNETIC MEMORY DEVICE AND DATA READING METHOD IN MAGNETIC MEMORY DEVICE

PROBLEM TO BE SOLVED: To reduce overall power consumption of a magnetic memory device, relating to the magnetic memory device for writing/reading data to/from a magnetic memory cell including a plurality of magnetic layers and to provide the data reading method of the device. SOLUTION: In the magnet...

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1. Verfasser: MATSUI NORIYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce overall power consumption of a magnetic memory device, relating to the magnetic memory device for writing/reading data to/from a magnetic memory cell including a plurality of magnetic layers and to provide the data reading method of the device. SOLUTION: In the magnetic memory device, the magnetic memory cell Mij formed by laminating the magnetic layers has a resistance value different depending on directions of magnetic moments of the plurality of magnetic layers. A plurality of magnetic memory cells are arranged along the intersections of a plurality of first lines and a plurality of second lines crossing the first lines. Voltage reading means 8 having capacitance values almost the same as capacitance values of respective magnetic memory cells are connected to respective magnetic memory cells in series. The data of the magnetic memory cells are read by determining the level of the voltage obtained by measuring at predetermined timing the transient potential of the contact point between one end of the magnetic memory cell to be selected by the first and second lines and the voltage reading means. COPYRIGHT: (C)2010,JPO&INPIT