SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing an increase in leakage current even when microfabrication is applied and a transistor is manufactured using an annealing process with a small thermal jet. SOLUTION: The semiconductor device has a gate electrode on a semiconductor substrate of a fist conductivity type with an insulating film interposed; a source-drain region, doped with an impurity of a second conductivity type, on both sides of a channel region of the semiconductor substrate right below the gate electrode in a state wherein it is insulated from the gate electrode; an extension region, having the same second conductivity type with the source/drain region, being shallower than the source/drain region, and connecting with the source/drain region, between the source/drain region and channel region; and a high-density fault region, having higher lattice fault density than a circumferential region, formed locally in a region of the first conductivity type nearby the extension region, a dot fault aggregate of dot faults being included in the high-density fault region. COPYRIGHT: (C)2010,JPO&INPIT