ADDITIVE GAS FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, METHOD OF MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MANUFACTURING DEVICE

PROBLEM TO BE SOLVED: To increase the light emission intensity of a light emitting element by a technique different from a way of thinking wherein impurities are removed from a conventional material gas as much as possible when the light emitting element made of a gallium nitride compound semiconductor is manufactured. SOLUTION: When a light emitting element structure made of a gallium nitride compound semiconductor is formed on a substrate 4 by an MOCVD method by introducing a material gas for gallium nitride compound semiconductor manufacture into a reactor 2, an additive gas consisted of a compound containing oxygen atoms is supplied from an additive gas container 15 to the reactor 2 to be coexistent in a reaction system. As the additive gas, there are a carbon monoxide gas, a carbon dioxide gas, water, a nitrogen monoxide gas, a nitrogen dioxide gas, a nitrous oxide gas, etc., available. COPYRIGHT: (C)2010,JPO&INPIT