METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor light emitting element for suppressing deterioration of luminous efficiency. SOLUTION: This method of manufacturing the nitride semiconductor light emitting element includes a process to form a ridge part 22 extending in the Y direction, and a process to form groove parts 33a and 33b extending in the Y direction so as to hold a region corresponding to the ridge part 22 between them in the X direction perpendicular to the Y direction. The process to form the groove parts 33a and 33b includes a process to form the groove part 33a in a region apart from the region corresponding to the ridge part 22 by a prescribed distance, and to form the groove part 33b in a region apart from a region corresponding to the ridge part 22 by a distance smaller than the prescribed distance, the groove part 33a is formed by scribing treatment by laser light, and the groove part 33b is formed by mechanical scribing treatment. COPYRIGHT: (C)2010,JPO&INPIT