WAFER PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a wafer processing apparatus for suppressing suction of foreign matters onto a substrate. SOLUTION: The wafer processing apparatus includes a first gas supply nozzle which is erected in a processing chamber along a stacking direction of substrates, and includes a plurality of gas supply ports and supplies a first processing gas produced by vaporizing a liquid material into the processing chamber, a vaporizer for vaporizing the liquid material, and a second gas supply nozzle which is erected adjacently to the first gas supply port, and includes a plurality of gas supply ports and supplies a second processing gas and an inert gas into the processing chamber, wherein the first processing gas and second processing gas are supplied alternately without being mixed with each other to form a desired film on a substrate and when the first processing gas is supplied, the inert gas is supplied from the second gas supply nozzle at a flow rate larger than the supply flow rate of the first processing gas. COPYRIGHT: (C)2010,JPO&INPIT