SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of increasing a time of processing gas contact with a processed substrate such as a wafer to supply a uniform processing gas. SOLUTION: The substrate processing apparatus includes an inner tube 4 housing the substrate, an oute...

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Bibliographische Detailangaben
Hauptverfasser:	TAKEBAYASHI MOTONARI, MARUBAYASHI TETSUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of increasing a time of processing gas contact with a processed substrate such as a wafer to supply a uniform processing gas. SOLUTION: The substrate processing apparatus includes an inner tube 4 housing the substrate, an outer tube 2 surrounding the inner tube, a gas nozzle 8 provided in the inner tube and supplies a gas into the inner tube, a first exhaust port 3 provided to the inner tube at a position opposed to the gas nozzle in a diameter direction so as to discharge the gas to between the inner tube and outer tube, and a second exhaust port 6 provided to the outer tube at a position opposed to the first exhaust port in a diameter direction so as to discharge the gas from between the inner tube and outer tube. COPYRIGHT: (C)2010,JPO&INPIT