SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To prevent a barrier metal film of wiring formed in a recess of an insulating film from being peeled off from the insulating film. SOLUTION: The semiconductor device 100 includes an interlayer insulating film 104 formed on a substrate (not shown) and having a wide wiring groove...

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Bibliographische Detailangaben
Hauptverfasser:	TOYOSHIMA HIRONORI, TAKEWAKI TOSHIJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent a barrier metal film of wiring formed in a recess of an insulating film from being peeled off from the insulating film. SOLUTION: The semiconductor device 100 includes an interlayer insulating film 104 formed on a substrate (not shown) and having a wide wiring groove 106 formed at the surface, and wide wiring 120 formed by filling the wide wiring groove 106 of the interlayer insulating film 104 and composed of a barrier metal film 110 and a copper film 116. Unevenness 114 is formed on the bottom face of the wide wiring groove 106 selectively at the corner thereof, and the barrier metal film 110 is formed on the unevenness 114. COPYRIGHT: (C)2010,JPO&INPIT