METHOD FOR PRODUCING Ni ALLOY TARGET MATERIAL

PROBLEM TO BE SOLVED: To provide a method for producing an Ni alloy target material having a uniform structure for suppressing variance of a sputtered film. SOLUTION: In the method for producing the Ni alloy target material comprising one or more selected from Cr, Mo and W by 10 to 30 mass%, and the...

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Bibliographische Detailangaben
Hauptverfasser: FUKUOKA ATSUSHI, FUJIMOTO MITSUHARU, UENO SUGURU, UENO TOMONORI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for producing an Ni alloy target material having a uniform structure for suppressing variance of a sputtered film. SOLUTION: In the method for producing the Ni alloy target material comprising one or more selected from Cr, Mo and W by 10 to 30 mass%, and the balance Ni with inevitable impurities, an ingot obtained by melting and casting the Ni alloy is subjected to plastic working at 800 to 1,300°C at a draft of ≥50%, and is thereafter subjected to recrystallization heat treatment at 800 to 1,300°C for 0.5 to 3 hr. COPYRIGHT: (C)2010,JPO&INPIT