METHOD FOR GROWING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal capable of preventing the occurrence of a dislocation with the movement to the straight body part and simultaneously removing an overhang at the upper end part of the straight body part, in growing a silicon single crysta...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHIMOTORI HIROSHI, NAITO NORIMASA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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