METHOD FOR GROWING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal capable of preventing the occurrence of a dislocation with the movement to the straight body part and simultaneously removing an overhang at the upper end part of the straight body part, in growing a silicon single crystal having a specific resistance of 0.02 Ωcm or less by a CZ (Czochralski) method. SOLUTION: In growing a shoulder part 9b and a straight body part 9c, after the diameter of the shoulder part 9b in growing reaches 80% of the target diameter D of the straight body part 9c, growing shifts to the straight body part 9c, wherein a lapse of time until the axial direction length of the grown straight body part 9c reaches 10% of the target length L of the straight body part 9c is regarded as a specific period t, and a pulling up speed in this specific period t is set to exceed the target pulling up speed of the straight body part 9c and to be 1.4 mm/min or below. COPYRIGHT: (C)2010,JPO&INPIT