THIN-FILM TRANSISTOR, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

PROBLEM TO BE SOLVED: To facilitate a method of manufacturing a thin-film transistor while suppressing the occurrence of an optical leak current. SOLUTION: The thin-film transistor includes: on a substrate (10), a base film (12) having a projection step (12a), extending in a first direction; on a su...

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Bibliographische Detailangaben
1. Verfasser:	EGAMI TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Zusammenfassung:	PROBLEM TO BE SOLVED: To facilitate a method of manufacturing a thin-film transistor while suppressing the occurrence of an optical leak current. SOLUTION: The thin-film transistor includes: on a substrate (10), a base film (12) having a projection step (12a), extending in a first direction; on a surface, a semiconductor layer (30a) formed on the base film in a longitudinal state and in a second direction crossing the first direction, having a step corresponding to the projection step on a surface, and locally having a narrow width in a channel width direction in a region overlapping the projection step; and a gate electrode (30b) arranged opposite the semiconductor layer with a gate insulating film (13) interposed. COPYRIGHT: (C)2010,JPO&INPIT