SUBSTRATE-TREATING APPARATUS

PROBLEM TO BE SOLVED: To provide a substrate-treating apparatus which can prevent the deposition of by-product. SOLUTION: In a substrate-treating apparatus which includes a treatment chamber for accommodating a wafer therein, a heater for heating the wafer, an inlet flange 10 which forms the lower p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	UMEMOTO MAMORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a substrate-treating apparatus which can prevent the deposition of by-product. SOLUTION: In a substrate-treating apparatus which includes a treatment chamber for accommodating a wafer therein, a heater for heating the wafer, an inlet flange 10 which forms the lower part of the treatment chamber, a gas supply pipe and a bar-type electrode installed in a first port 12 of the inlet flange 10, and a gas exhaust pipe installed in a second port 13 of the inlet flange 10, a heater 20 of a formed metal is provided in the inlet flange 10 and a cartridge heater 30 is provided each in the first port 12 and in the second port 13. The heater 20 of the formed metal and the cartridge heater 30 can heat the inlet flange 10, the periphery of the first port 12 and the periphery of the second port 13, and thereby can prevent the production of the by-product. COPYRIGHT: (C)2010,JPO&INPIT