SEMICONDUCTOR LASER DEVICE

PROBLEM TO BE SOLVED: To obtain a highly reliable ridge-type semiconductor laser device and an optical module. SOLUTION: In the ridge-type semiconductor laser device, a p-side electrode has the first conductor layer region and the second conductor layer region above the first one. At least one end s...

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Bibliographische Detailangaben
Hauptverfasser: TSUJI SHINJI, NOMOTO ETSUKO, NAKAHARA KOJI, SHIMAOKA MAKOTO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a highly reliable ridge-type semiconductor laser device and an optical module. SOLUTION: In the ridge-type semiconductor laser device, a p-side electrode has the first conductor layer region and the second conductor layer region above the first one. At least one end surface of the second conductor layer region is disposed in the inner side to the reflection end surface. The strain due to the stress by an electrode against the device end surface becomes small, and the device simultaneously has the structure which does not cause super saturation and absorption. The ridge-type semiconductor laser device having high reliability can be provided. The optical module using such semiconductor laser device has quite high reliability. COPYRIGHT: (C)2010,JPO&INPIT