COMPOSITION FOR ADJUSTING LOW DIELECTRIC-CONSTANT MATERIAL

PROBLEM TO BE SOLVED: To provide a high-performance material being synthesized from a chemical reagent purifying ionic impurities up to a ppb level and having a dielectric constant of 3.7 or less and an excellent mechanical strength and a film containing the high-performance material. SOLUTION: The...

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Hauptverfasser:	WEIGEL SCOTT JEFFREY, MACDOUGALL JAMES EDWARD, CAMPBELL KEITH DOUGLAS, CENDAK KEITH, BRAYMER THOMAS ALBERT, PETERSON BRIAN KEITH, CHONDROUDIS KONSTANTINOS, RAMBERG C ERIC, KIRNER JOHN FRANCIS, DEIS THOMAS ALAN, DEVENNEY MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE CONDUCTORS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS INORGANIC CHEMISTRY INSULATORS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LIME, MAGNESIA METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PERFORMING OPERATIONS POLISHES REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SLAG THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING TREATMENT OF NATURAL STONE USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a high-performance material being synthesized from a chemical reagent purifying ionic impurities up to a ppb level and having a dielectric constant of 3.7 or less and an excellent mechanical strength and a film containing the high-performance material. SOLUTION: The mixture of the chemical reagent is used for manufacturing the high-performance material having the dielectric constant of approximately 3.7 or less. The mixture contains (A) a silica source, (B) porogen containing 5 to 75 wt.% of ethylene oxide group, (C) a carboxylic acid salt selected from a group consisting of carboxylic acid, carboxylic acid anions, a carboxylic acid ester or combinations thereof and (D) an ionic additive. The mixture mixes the chemical reagent after a purification before the chemical reagent is added to the mixture when at least one chemical reagent includes a metallic-impurity level of 1 ppm or more. The high-performance film and a semiconductor device comprising the high-performance film are obtained by using the mixture. COPYRIGHT: (C)2010,JPO&INPIT