AQUEOUS DISPERSING ELEMENT FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING DISPERSING ELEMENT, AND METHOD OF PERFORMING CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing capable of performing polishing without any copper remainder (copper residue) and corrosion while striking a balance between high polishing speed and highly flat characteristics without causing any defects in a copper film and an insulation film, to provide a method of preparing the dispersing element, and to provide a method of performing chemical mechanical polishing of a semiconductor device. SOLUTION: The aqueous dispersing element for chemical mechanical polishing includes an amino acid (A), an imidazole dielectric (B), an oxidant (C), and an abrasive grain (D), where the ratio (WA/WB) of the content (WA) [mass%] of the constituent of (A) to the content (WB) [mass%] of the constituent of (B) ranges from 1 to 100. COPYRIGHT: (C)2010,JPO&INPIT