EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an exposure mask with which a fine pattern can be formed with high accuracy by double patterning by use of a single exposure mask and misalignment can be detected, and to provide a method for manufacturing a semiconductor device. SOLUTION: The exposure mask includes...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: TANAKA YOSHIJI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TANAKA YOSHIJI
description PROBLEM TO BE SOLVED: To provide an exposure mask with which a fine pattern can be formed with high accuracy by double patterning by use of a single exposure mask and misalignment can be detected, and to provide a method for manufacturing a semiconductor device. SOLUTION: The exposure mask includes a plurality of blocks each having a pattern formed therein, arranged at least in one direction at a predetermined block interval, in which the pattern is prepared by repeatedly forming the same pattern at a predetermined pitch. The mask also includes a first alignment inspection mark and a second alignment inspection mark disposed at a position shifted from the first alignment inspection mark along the arrangement direction of the blocks, by a distance in accordance with the distance equal to a single interval of the blocks. COPYRIGHT: (C)2010,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2010113195A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2010113195A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2010113195A3</originalsourceid><addsrcrecordid>eNrjZLB3jQjwDw4NclXwdQz21lFw9HNR8HUN8fB3UfB3A4r5hbo5OoeEBnn6uSsEu_p6Ovv7uYQ6h_gHKbi4hnk6u_IwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQwNDQ2NDS1NHY6IUAQDTUCrH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>TANAKA YOSHIJI</creator><creatorcontrib>TANAKA YOSHIJI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an exposure mask with which a fine pattern can be formed with high accuracy by double patterning by use of a single exposure mask and misalignment can be detected, and to provide a method for manufacturing a semiconductor device. SOLUTION: The exposure mask includes a plurality of blocks each having a pattern formed therein, arranged at least in one direction at a predetermined block interval, in which the pattern is prepared by repeatedly forming the same pattern at a predetermined pitch. The mask also includes a first alignment inspection mark and a second alignment inspection mark disposed at a position shifted from the first alignment inspection mark along the arrangement direction of the blocks, by a distance in accordance with the distance equal to a single interval of the blocks. COPYRIGHT: (C)2010,JPO&amp;INPIT</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100520&amp;DB=EPODOC&amp;CC=JP&amp;NR=2010113195A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100520&amp;DB=EPODOC&amp;CC=JP&amp;NR=2010113195A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANAKA YOSHIJI</creatorcontrib><title>EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide an exposure mask with which a fine pattern can be formed with high accuracy by double patterning by use of a single exposure mask and misalignment can be detected, and to provide a method for manufacturing a semiconductor device. SOLUTION: The exposure mask includes a plurality of blocks each having a pattern formed therein, arranged at least in one direction at a predetermined block interval, in which the pattern is prepared by repeatedly forming the same pattern at a predetermined pitch. The mask also includes a first alignment inspection mark and a second alignment inspection mark disposed at a position shifted from the first alignment inspection mark along the arrangement direction of the blocks, by a distance in accordance with the distance equal to a single interval of the blocks. COPYRIGHT: (C)2010,JPO&amp;INPIT</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB3jQjwDw4NclXwdQz21lFw9HNR8HUN8fB3UfB3A4r5hbo5OoeEBnn6uSsEu_p6Ovv7uYQ6h_gHKbi4hnk6u_IwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQwNDQ2NDS1NHY6IUAQDTUCrH</recordid><startdate>20100520</startdate><enddate>20100520</enddate><creator>TANAKA YOSHIJI</creator><scope>EVB</scope></search><sort><creationdate>20100520</creationdate><title>EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><author>TANAKA YOSHIJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2010113195A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TANAKA YOSHIJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANAKA YOSHIJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2010-05-20</date><risdate>2010</risdate><abstract>PROBLEM TO BE SOLVED: To provide an exposure mask with which a fine pattern can be formed with high accuracy by double patterning by use of a single exposure mask and misalignment can be detected, and to provide a method for manufacturing a semiconductor device. SOLUTION: The exposure mask includes a plurality of blocks each having a pattern formed therein, arranged at least in one direction at a predetermined block interval, in which the pattern is prepared by repeatedly forming the same pattern at a predetermined pitch. The mask also includes a first alignment inspection mark and a second alignment inspection mark disposed at a position shifted from the first alignment inspection mark along the arrangement direction of the blocks, by a distance in accordance with the distance equal to a single interval of the blocks. COPYRIGHT: (C)2010,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2010113195A
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
title EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T06%3A47%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANAKA%20YOSHIJI&rft.date=2010-05-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2010113195A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true