EXPOSURE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an exposure mask with which a fine pattern can be formed with high accuracy by double patterning by use of a single exposure mask and misalignment can be detected, and to provide a method for manufacturing a semiconductor device. SOLUTION: The exposure mask includes a plurality of blocks each having a pattern formed therein, arranged at least in one direction at a predetermined block interval, in which the pattern is prepared by repeatedly forming the same pattern at a predetermined pitch. The mask also includes a first alignment inspection mark and a second alignment inspection mark disposed at a position shifted from the first alignment inspection mark along the arrangement direction of the blocks, by a distance in accordance with the distance equal to a single interval of the blocks. COPYRIGHT: (C)2010,JPO&INPIT