METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a device structure changing the surface of a metallic gate electrode into a metallic insulating film at a low temperature and improving the reliability of devices such as a circuit and a system, and a method for manufacturing the device structure. SOLUTION: In a semi...

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Bibliographische Detailangaben
Hauptverfasser:	INO KAZUHIDE, NITTA TAKEHISA, OMI TADAHIRO, SHINOHARA HISAKUNI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a device structure changing the surface of a metallic gate electrode into a metallic insulating film at a low temperature and improving the reliability of devices such as a circuit and a system, and a method for manufacturing the device structure. SOLUTION: In a semiconductor device, a gate electrode for a MOS device is formed by using metal, the sidewall of the MOS device is modified to the metallic insulating film and the reliability of the device is enhanced. The superior metallic insulating film is formed at the low temperature. COPYRIGHT: (C)2010,JPO&INPIT