SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To form a channel stop region in a semiconductor substrate under an element isolation insulating film with good controllability. SOLUTION: A semiconductor apparatus has: an isolation groove 6 consisting of the first groove 6a provided on a surface of a first conductive type semiconductor substrate 100, and a second groove 6b elongating from a bottom center part of the first groove 6a to a backside direction of the semiconductor substrate and having a width smaller than that of the first groove 6a; an element isolation insulating film 5 buried in the isolation groove 6; a second conductive type diffusion layer 10 opposed to the first conductive type and which is provided on the surface of the semiconductor substrate on both sides of the isolation groove 6 separately from each other on each side; a gate electrode 20 formed on the semiconductor substrate between the diffusion layers 10 via a gate insulating film 7; and a channel stop region 30 provided over a predetermined depth from a bottom surface of the second groove 6b and which has the same conductive type as the first conductive type and an impurity concentration higher than that of the semiconductor substrate 100. COPYRIGHT: (C)2010,JPO&INPIT