SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To reduce the deflection of upper wiring of a semiconductor device having an air gap type multilayer wiring structure, and to simplify a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device 111 includes an interlayer film layer 95 including a sem...
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| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To reduce the deflection of upper wiring of a semiconductor device having an air gap type multilayer wiring structure, and to simplify a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device 111 includes an interlayer film layer 95 including a semiconductor element 102, a multilayer wiring portion 96 provided on the interlayer film layer 95 and having an air gap portion 96c, and a columnar supporter 51 stood on the interlayer film layer 95 to support one of a plurality of wiring portions constituting the multilayer wiring portion 96, made of the same material with the wiring portions, and electrically connected to only one wiring portion. Therefore, the flexion of the upper wiring is reduced and the manufacture is facilitated. COPYRIGHT: (C)2010,JPO&INPIT |
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